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Part Number
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K4S510732B |
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Manufacturer
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Samsung semiconductor |
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Description
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Stacked 512Mbit SDRAM |
|
Published
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Jul 14, 2007 |
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Detailed Description
|
Preliminary
K4S510732B CMOS SDRAM
Stacked 512Mbit SDRAM
16M x 8bit x 4 Banks Synchronous DRAM LVTTL
co...
|
|
Datasheet
|
K4S510732B
|
Overview
Preliminary
K4S510732B CMOS SDRAM
Stacked 512Mbit SDRAM
16M x 8bit x 4 Banks Synchronous DRAM LVTTL
com
Revision 0.
0 Feb.
2001
* Samsung Electronics reserves the right to change products or specification without
Rev.
0.
0 Feb.
2001
Preliminary
K4S510732B CMOS SDRAM
Revision 0.
0 (Feb.
, 2001)
Rev.
0.
0 Feb.
2001
Preliminary
K4S510732B
16M x 8Bit x 4 Banks Synchronous DRAM
FEATURES
• JEDEC standard 3.
3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge o...
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