Freescale Semiconductor Technical Data
Document Number: MRF1517N Rev.
5, 9/2006
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequencies to 520 MHz.
The high gain and broadband performance of this device makes it ideal for large- signal, common source amplifier applications in 7.
5 volt portable FM equipment.
D • Specified Performance @ 520 MHz, 7.
5 Volts Output Power — 8 Watts Power Gain — 11 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 9.
5 Vdc, 520 MHz, 2 dB Overdrive Features • Characterized with Series Equivalent Large - Signal G Impedance Parameters • Excellent Thermal Stabilit...