| Part Number | NTE2661 |
| Manufacturer | NTE Electronics |
| Title | Silicon NPN Transistor Horizontal Deflection Output |
| Description | NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV Features: D High Speed: tf = 0.15µs Typ D High Breakdown Voltage: VCBO = 1700... |
| Features |
D High Speed: tf = 0.15µs Typ D High Breakdown Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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| File Size | 97.55KB |
| Datasheet |
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NTE266 : NTE266 Silicon NPN Transistor Darlington Power Amplifier Features: D Forward Current Transfer Ratio: hFE = 40,000 Min D Power Dissipation: 1.33W Free–Air @ TA = +50°C D Hard Solder Mountdown Applications: D Driver, IC Driver D Regulator D Touch Switch D Audio Output D Relay Substitute D Oscillator D Servo–Amplifier D Capacitor Multiplier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–to–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector–to–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Emitter–to–B.
NTE2662 : The NTE2662 is a silicon NPN type transistor in a miniature surface mount package designed for oscillator applications up to 3GHz. This device features low voltage operation, low phase noise, and high immunity to pushing effects. Features: D New Miniature Surface Mount Package − Small Transistor Footprint − 1.0mm x 0.5mm x 0.5mm − Low Profile / 0.50mm Package Height − Flat Lead Style for Better RF Performance D Ideal for ≤ 3GHz Oscillators D Low Phase Noise D Low Pushing Factor Absolute Maximum Ratings: (TA = +25°C, Note 1 unless otherwise specified) Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V C.
NTE2665 : www.DataSheet4U.com NTE2665 Silicon NPN Transistor Horizontal Deflection Output for High Resolution Display, Color TV Features: D High Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max D High Speed: tf = 0.1μs Typ Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE2666 : www.DataSheet4U.com NTE2666 (NPN) & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Current Gain - Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NTE2667 : www.DataSheet4U.com NTE2666 (NPN) & NTE2667 (PNP) Silicon Complementary Transistors High Frequency Driver Features: D DC Current Gain Specified to 5 Amperes D Collector-Emitter Sustaining Voltage D High Current Gain - Bandwidth Product Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Collector-Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..
NTE2668 : www.DataSheet4U.com NTE2668 Silicon NPN Transistor High Current Switching Features: D Adoption of FBET, MBIT process D Large Current Capacitance D Low Collector-To-Emitter Saturation Voltage D High Speed Switching D High Allowable Power Dissipation Applications: D DC-DC Converter D Relay Drivers D Lamp Drivers D Motor Drivers D Strobes Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collecto.