SURMOUNTTM Low Barrier 0201 Footprint Silicon
Schottky Diodes
Features
• Extremely Low Parasitic Capitance and Inductance • Extremely Small 0201 (600x300um) Footprint • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 °C, 16 hours) • Lower Susceptibility to ESD Damage
MA4E2501-1290 Series V1
The MA4E2501L-1290 SurMount Low Barrier
Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters.
The HMIC constructio...