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RF Power Field Effect
Transistor LDMOS, 865 — 960 MHz, 45W, 26V
5/21/04
Preliminary
MAPLST0810-045CF
Features
Q
Package Style
Q
Q Q Q
Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications.
Typical CW RF Performance at 960MHz, 26VDC: Q POUT: 45W (P1dB) Q Gain: 17.
5dB Q Efficiency: 50% Ruggedness: 10:1 VSWR @ 45W CW, 26V, 900MHz High Gain, High Efficiency and High Linearity Excellent Thermal Stability
P-239
Maximum Ratings
Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 117 -40 to +150 +200 Units Vdc Vdc W °C °C
Therma...