www.
DataSheet4U.
com
RF Power Field Effect
Transistor LDMOS, 800—2200 MHz, 2W, 28V
4/14/05
Preliminary
MAPLST0822-002PP
Features
Designed for broadband commercial applications up to 2.
2GHz High Gain, High Efficiency and High Linearity Ease of Design for Gain and Insertion Phase Flatness Excellent Thermal Stability W-CDMA Performance at 2.
17GHz, 28Vdc Average Output Power: 28dBm @ -39dBc ACPR Gain: 14.
5dB (typ.
) Efficiency: 23% (typ.
) 10:1 VSWR Ruggedness at 2W (CW), 28V, 2.
11GHz Performance at 960MHz, 26Vdc, P1dB Average Output Power: 2W min.
Gain: 20dB (typ.
) Efficiency: 50% (typ.
) 10:1 VSWR Ruggedness at 2W, 26V, 960MHz
Package Style
PFP-16
Maximum Ratings
Parameter Drain—Source Vol...