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RF Power Field Effect
Transistor LDMOS, 1890 — 1925 MHz, 30W, 26V
10/31/03
Preliminary
MAPLST1900-030CF
Features
Designed for PHS applications in the 1890-1925 MHz frequency band.
Q
Package Style
Q
Typical performance in PHS mode at -68 dBc ACPR (600kHz): Q Average Output Power: 8W Q Gain: 13dB (typ.
) Q Efficiency: 26% (typ.
) 10:1 VSWR Ruggedness at 8W, 26V, 1890MHz)
MAPLST1900-030CF
Maximum Ratings
Parameter Drain—Source Voltage Gate—Source Voltage Total Power Dissipation @ TC = 25 °C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 97 -40 to +150 +200 Units Vdc Vdc W °C °C
Thermal Characteristics
Characteristic Thermal Resistan...