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MAPRST0912-350 AVIONICS PULSED POWER
TRANSISTOR
350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10% Duty Cycle
OUTLINE DRAWING
Preliminary Specification, Rev 02/03/2004 FEATURES
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NPN Silicon Microwave Power
Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Junction Temperature Storage Temperature VCES VEBO IC...