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MAPRST1214-030UF
Preliminary Datasheet Revision 01/14/2003 FEATURES ∗
NPN Silicon Microwave Power
Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ∗ Typcial Second Harmonic Level -30dBc ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Junction Temperature Storage Temperature VCES VEBO IC PTOT TJ TSTG 70 3.
0 4.
8 145 200 -65 to +200
RADAR PULSED POWER TRA...