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PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURES
• • • • • HIGH fT: 17 GHz TYP at 2 V, 7 mA LOW NOISE FIGURE: NF = 1.
1 dB TYP at f = 2 GHz, 2 V, 1 mA HIGH GAIN: |S21E|2 = 15.
5 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
0.
65 2.
0 ± 0.
2 1.
3 2 1
NE698M01
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.
1 ± 0.
1 1.
25 ± 0.
1
6 0.
2 (All Leads) 5
T1E
3
4
DESCRIPTION
The NE698M01 is an
NPN high frequency silicon epitaxial
transistor (NE686) encapsulated in an ultra small 6 pin SOT363 package.
Its four emitter pins decrease emitter inductance resulting i...