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PRELIMINARY DATA SHEET
NEC's
NPN SiGe NESG2101M16 HIGH FREQUENCY
TRANSISTOR
FEATURES
• • • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.
9 dB at 2 GHz NF = 0.
6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minimold M16
• •
DESCRIPTION
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications including low noise amplifiers, medium power amplifiers, and oscillators
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS P...