DATASHEET
NEC's
NPN SiGe NESG3031M14 HIGH FREQUENCY
TRANSISTOR
FEATURES
• THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.
95 dB TYP.
, Ga = 10.
0 dB TYP.
@ VCE = 2 V, IC = 6 mA, f = 5.
2 GHz NF = 1.
1 dB TYP.
, Ga = 9.
5 dB TYP.
@ VCE = 2 V, IC = 6 mA, f = 5.
8 GHz • MAXIMUM STABLE POWER GAIN: MSG = 15.
0 dB TYP.
@ VCE = 3 V, IC = 20 mA, f = 5.
8 GHz • SiGe HBT TECHNOLOGY (UHS3) ADOPTED: fmax = 110 GHz • M14 PACKAGE: 4-pin lead-less minimold package M14 Package
ORDERING INFORMATION
PART NUMBER NESG3031M14-A NESG3031M14-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 1 (Collector), Pin 4 (Emitter) face th...