PACKAGED ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.
7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.
4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW
LP7512P70
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DESCRIPTION AND APPLICATIONS The LP7512P70 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam direct-write 0.
25 µ m by 200 µ m
Schottky barrier gate.
The recessed “mushroom” Ti/Pt/Au gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processing have been optimized for optimum low noise performance.
The LP7512’s active...