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DC COMPONENTS CO.
, LTD.
R
DC8050S
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for general purpose amplifier applications.
TO-92
Pinning
1 = Emitter 2 = Base 3 = Collector
.
190(4.
83) .
170(4.
33)
.
190(4.
83) .
170(4.
33) 2 Typ 2 Typ .
500 Min (12.
70)
o o
Absolute Maximum Ratings(TA=25
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PD TJ TSTG
o
C) Rating 25 20 5 700 625 +150 -55 to +150 Unit V V V mA mW
o o
Symbol
.
050 Typ (1.
27)
.
022(0.
56) .
014(0.
36) .
100 Typ (2.
54)
.
...