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General Purpose
Transistors
COMCHIP
SMD Diodes Specialist
MMBT2369-G (
NPN)
RoHS Device
Features
-Power dissipation P C =0.
3W
0.
056(1.
40) 0.
047(1.
20)
SOT-23
0.
119(3.
00) 0.
110(2.
80)
3
Marking: M1J
Collector 3
0.
044(1.
10) 0.
035(0.
90)
1
0.
083(2.
10) 0.
066(1.
70)
2
0.
006(0.
15) 0.
002(0.
05) 0.
103(2.
60) 0.
086(2.
20)
1 Base
0.
020(0.
50) 0.
013(0.
35)
0.
006(0.
15) max 0.
007(0.
20) min
2 Emitter
O
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25 C unless otherwise noted)
Parameter
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current-continuous Power dissipation Thermal resistance, junction to ambient air Junction and storage tem...