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DC COMPONENTS CO.
, LTD.
R
DMBT2907
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for general purpose switching and amplifier applications.
SOT-23
.
020(0.
50) .
012(0.
30)
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.
063(1.
60) .
055(1.
40)
.
108(0.
65) .
089(0.
25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -40 -5 -600 225 +150 -55 to +150 Unit V V V mA mW
o o
.
091(2.
30) .
067(1.
70) .
118(3.
00) .
110(2.
80)
.
...