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DC COMPONENTS CO.
, LTD.
R
DXTA13
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN DARLINGTON
TRANSISTOR
Description
Designed for applications requiring extremely high current gain.
SOT-89
Pinning
1 = Base 2 = Collector 3 = Emitter
.
066(1.
70) .
059(1.
50)
.
063(1.
60) .
055(1.
40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VEBO IC PD TJ TSTG Rating 30 30 10 300 1 +150 -55 to +150 Unit V V V mA W
o o
.
167(4.
25) .
159(4.
05) 1 2 3
.
102(2.
60) .
095(2.
40)
.
020(0.
51) .
014(0.
36)
.
060(1.
52) .
058(...