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DC COMPONENTS CO.
, LTD.
R
I882
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for use in output stage of 10W audio amplifier, voltage
regulator, DC-DC converter, and relay driver.
TO-251
.
268(6.
80) .
252(6.
40) .
217(5.
50) .
205(5.
20) 2
Pinning
1 = Base 2 = Collector 3 = Emitter
.
022(0.
55) .
018(0.
45) .
063(1.
60) .
055(1.
40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC IC IB ...