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DC COMPONENTS CO.
, LTD.
R
LB123D
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for high voltage, high speed switching circuits, and amplifier applications .
TO-126ML
.
163(4.
12) .
153(3.
87) .
146(3.
70) .
136(3.
44)
Pinning
1 = Emitter 2 = Collector 3 = Base
.
044(1.
12) .
034(0.
87) .
060(1.
52) .
050(1.
27)
.
148(3.
75) .
138(3.
50) .
300(7.
62) .
290(7.
37) 1 2 3
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
.
123(3.
12) .
113(2.
87)...