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DC COMPONENTS CO.
, LTD.
R
MID112
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
NPN DARLINGTON
TRANSISTOR
Description
Designed for general purpose power and switching such as output or driver stages in applications such as switching
regulators, converters, and amplifiers.
TO-251
.
268(6.
80) .
252(6.
40) .
217(5.
50) .
205(5.
20) 2
Pinning
1 = Base 2 = Collector 3 = Emitter
.
022(0.
55) .
018(0.
45) .
063(1.
60) .
055(1.
40)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
.
284(7.
20) .
268(6.
80)
Symbol VCBO VCEO...