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DISCRETE SEMICONDUCTORS
DATA SHEET
BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs
Product specification 2003 Nov 14
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Philips Semiconductors Product specification
N-channel dual-gate MOS-FETs
FEATURES • Short channel
transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier • Excellent low frequency noise performance • Partly internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.
APPLICATIONS • Gain controlled low noise VHF and UHF amplifiers for 5 V digital and analog television tuner applications.
DESCRIPTION Enhancement type N-ch...