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BLA1011-300
Avionics LDMOS
transistors
Rev.
01 — 3 April 2007 Product data sheet
1.
Product profile
1.
1 General description
300 W LDMOS pulsed power
transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz.
Table 1.
Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit; tp = 50 µs; δ = 2 %.
Mode of operation Pulsed class-AB f (MHz) 1030 to 1090 IDq (mA) 150 VDS (V) 32 PL (W) 300 Gp (dB) 16.
5 ηD (%) 57
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Therefore care should be taken during transport and handling.
1.
2 Features
I Typical performance at frequencies between 1030 MHz a...