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BLC6G20-110; BLC6G20LS-110
UHF power LDMOS
transistor
Rev.
01 — 30 January 2006 Objective data sheet
1.
Product profile
1.
1 General description
110 W LDMOS power
transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation f (MHz) CW GSM EDGE 2-carrier W-CDMA VDS (V) PL (W) 100 48 (AV) 25 (AV) Gp (dB) 17 17.
5 18 ηD (%) 51 40 32 ACPR400 (dBc) −60 ACPR600 (dBc) −70 EVM (%) 2.
1 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1]
1930 to 1990 28 1930 to 1990 28 1930 to 1990 28
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at...