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BLF0810S-180

Part Number BLF0810S-180
Manufacturer NXP
Description Base station LDMOS transistors
Published Aug 17, 2007
Detailed Description com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS t...
Datasheet BLF0810S-180




Overview
com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 com Philips Semiconductors Product specification Base station LDMOS transistors FEATURES • Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA.
Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 30 W – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • Designed for broadband operation ...






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