HIGH PERFORMANCE LOW NOISE PHEMT • FEATURES ♦ 1.
0 dB Noise Figure at 18 GHz ♦ 10 dB Associated Gain at 18 GHz ♦ Low DC Power Consumption
LPS200
GATE BOND PAD (2X) SOURCE BOND PAD (2x)
DRAIN BOND PAD (2X)
DIE SIZE: 12.
6X10.
2mils (320x260 µm) DIE THICKNESS: 3.
9 mils (100 µm) BONDING PADS: 3.
3X2.
6 mils (85x65 µm)
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DESCRIPTION AND APPLICATIONS The LPS200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility
Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.
25 µm by 200 µm
Schottky barrier gate.
The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistances.
The epitaxial structure and processi...