Part Number
|
LN151L |
Manufacturer
|
Panasonic Semiconductor |
Description
|
GaAs Infrared Light Emitting Diodes |
Published
|
Mar 22, 2005 |
Detailed Description
|
Infrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems Features
...
|
Datasheet
|
LN151L
|
Overview
Infrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
For optical control systems Features
High-power output, high-efficiency : PO = 7.
5 mW (typ.
) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.
)
LN151F
ø4.
6±0.
15
Unit : mm
Glass window
12.
7 min.
4.
5±0.
2
2-ø0.
45±0.
05 2.
54±0.
25
2 0.
0± 1.
1.
0± 0.
15
3˚ 45±
Infrared light emission close to monochromatic light : λP = 950 nm (typ.
) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package
2 1
ø5.
75 max.
1: Anode 2: Cathode
LN151L Absolute Maximum Ratings (Ta = 25˚C)
Parameter P...
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