Infrared Light Emitting Diodes LN152 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.
) Wide directivity, matched for external optical systems : θ = 100 deg.
Infrared light emission close to monochromatic light : λP = 950 nm (typ.
) Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.
35 +0.
2 –0.
1 ø4.
2 +0.
1 –0.
2 3.
0±0.
3 12.
7 min.
2.
0±0.
1 0.
2±0.
05 2-ø0.
45±0.
05 0 1.
5 .
1 +0 0.
1 – 1.
0 ±0 .
1 45± 3˚ High-speed modulation 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) ...

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