Infrared Light Emitting Diodes LN172 GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 12 mW (typ.
) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.
) Good optical power output linearity with respect to input current Long lifetime, high reliability 1.
0± 0.
15 2.
4±0.
3 12.
7 min.
1.
2±0.
1 0.
25±0.
1 ø4.
2 +0.
2 –0.
1 2-ø0.
45±0.
05 Wide directivity : θ = 100 deg.
(typ.
) 15 0.
0± 1.
45± 3˚ ø5.
35 +0.
2 –0.
1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2 1 Sy...

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