Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 0.
8 max.
For optical control systems 1.
5±0.
2 Features High-power output, high-efficiency : PO = 12 mW (typ.
) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ.
) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg.
(typ.
) 3.
9±0.
25 4.
5±0.
15 3.
5±0.
15 2.
1±0.
15 1.
6±0.
15 0.
8±0.
1 12.
8 min.
(2.
95) 2-1.
2±0.
3 2-0.
45±0.
15 0.
45±0.
15 1 2.
54 2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD...

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