Part Number
|
IRL2203NPBF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Aug 28, 2007 |
Detailed Description
|
www.DataSheet4U.com
PD - 94953
IRL2203NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l ...
|
Datasheet
|
IRL2203NPBF
|
Overview
www.
DataSheet4U.
com
PD - 94953
IRL2203NPbF
HEXFET® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l l
D
VDSS = 30V RDS(on) = 7.
0mΩ
G S
ID = 116A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 pac...
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