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ISSUED DATE :2004/12/15 REVISED DATE :2005/12/23B
GJ122
Description Features
NPN EPITAXIAL PLANAR T RANSISTOR
The GJ122 is designed for use in general purposes and low speed switching applications.
High DC current gain Built-in a damper diode at E-C
Package Dimensions
TO-252
REF.
A B C D E F S
Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90
REF.
G H J K L M R
Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector C...