com Pb Free Plating Product ISSUED DATE :2005/04/06 REVISED DATE : GJ9T 18 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 14m 38A Description The GJ9T18 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
*Capable of 2.
5V gate drive *Low Gate Charge Features Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Volta...

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