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ISSUED DATE :2005/05/06 REVISED DATE :
GJ5706
Description Features
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
The GJ5706 is designed high current switching applications.
*Large current capacitance *Low collector-to-emitter saturation voltage *High-speed switching *High allowable power dissipation
Package Dimensions TO-252
REF.
A B C D E F S
Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90
REF.
G H J K L M R
Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0 0.
15 0.
90 1.
50 5.
40 5.
80 0.
80 1.
20
Absolute Maximum Ratings (Ta = 25
Parameter Collector to Base Voltage Collector to Emitter Voltage Collector to Emitter Voltage Emitt...