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CER6080
Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
FEATURES
60V, 5.
6A, RDS(ON) = 45mΩ @VGS = 10V.
RDS(ON) = 75mΩ @VGS = 4.
5V.
-60V, -3.
3A, RDS(ON) = 130mΩ @VGS = -10V.
RDS(ON) = 180mΩ @VGS = -4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D1 8 D1 7 D2 6 D2 5
5
DIP-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg N-Channel 60 P-Channel -60 Units V V A A W C
±20
5.
6 20 2.
5 -55 to 150
±20
-3.
3...