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GSD1624
Description FEATURES
1/3
NPN EPITAXIAL PLANAR SILICON
TRANSISTOR
HIGH CURRENT SWITCHING APPLICATION The GSD1624 applies to voltage
regulators, relay drivers, lamp drivers, and electrical equipment .
*Adoption of FBET, MBIT processes *Low collector-to-emitter saturation voltage *Fast switching speed *Large current capacity and wide ASO
Package Dimension
REF.
A B C D E F
Millimeter Min.
Max.
4.
4 4.
6 4.
05 4.
25 1.
50 1.
70 1.
30 1.
50 2.
40 2.
60 0.
89 1.
20
REF.
G H I J K L M
Millimeter Min.
Max.
3.
00 REF.
1.
50 REF.
0.
40 0.
52 1.
40 1.
60 0.
35 0.
41 5 TYP.
0.
70 REF.
Absolute Maximum Ratings (Ta=25
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter ...