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ISSUED DATE :2006/01/18 REVISED DATE :
GSD2656
Description Package Dimensions
NPN EPITAXIAL T RANSISTOR
The GSD2656 is designed for general purpose amplifier applications.
REF.
A A1 A2 D E HE
Millimeter Min.
Max.
0.
80 1.
10 0 0.
10 0.
80 1.
00 1.
80 2.
20 1.
15 1.
35 1.
80 2.
40
REF.
L1 L b c e Q1
Millimeter Min.
Max.
0.
42 REF.
0.
15 0.
35 0.
25 0.
40 0.
10 0.
25 0.
65 REF.
0.
15 BSC.
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 30 30 6 1 225 Unit
V V V A mW
Elec...