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CORPORATION
GSD965
Description
NPN EPITAXIAL PLANAR T RANSISTOR
ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B
The GSD965 is designed for use as AF output amplifier and flash unit
Package Dimensions
D E S1
TO-92
A
b1 SE A TING P LA NE
L
REF.
A S1 b
e1 e b C
Millimeter Min.
4.
45 1.
02 0.
36 0.
36 0.
36 Max.
4.
7 0.
51 0.
76 0.
51
REF.
D E L e1 e
Millimeter Min.
4.
44 3.
30 12.
70 1.
150 2.
42 Max.
4.
7 3.
81 1.
390 2.
66
b1 C
Absolute Maximum Ratings at Ta = 25
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous) Collector Current (Peak PT=10mS) Junction Temperature Storage Temperature Total Power Dissipation at Ta =...