www.
DataSheet4U.
com ISSUED DATE :2005/08/31 REVISED DATE : GSM BT 5551 Description Features NP N EP ITAXI AL P L ANAR T RANS ISTO R The GSMBT5551 is designed for general purpose applications requiring high breakdown voltage.
High Collector-Emitter Breakdown Voltage (BVCEO=160V @ IC=1mA) Complementary to GSMBT5401 Package Dimensions REF.
A A1 A2 D E HE Millimeter Min.
Max.
0.
80 1.
10 0 0.
10 0.
80 1.
00 1.
80 2.
20 1.
15 1.
35 1.
80 2.
40 REF.
L1 L b c e Q1 Millimeter Min.
Max.
0.
42 REF.
0.
15 0.
35 0.
25 0.
40 0.
10 0.
25 0.
65 REF.
0.
15 BSC.
Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base V...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)