www.
DataSheet4U.
com High Speed GaAlAs Infrared Emitter OPE5585 The OPE5585 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time.
This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package and has narrow beam angle with lensed package and cup frame.
Especially this device is suited as the emitter of data transmission without cable.
FEATURES • High speed : 25ns rise time • 850nm wavelength • Narrow beam angle • Low forward voltage • High power and high reliability • Available for pulse oper...

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