Part Number
|
RQK0604IGDQA |
Manufacturer
|
Renesas Technology |
Description
|
Silicon N-Channel MOSFET |
Published
|
Sep 13, 2007 |
Detailed Description
|
RQK0604IGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V...
|
Datasheet
|
RQK0604IGDQA
|
Overview
RQK0604IGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 111 mΩ typ.
(at VGS = 4.
5 V, ID = 1 A)
• Low drive current • High speed switching • VDSS ≥ 60 V and capable of 2.
5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
1 2
Note: Marking is “IG“.
Preliminary Datasheet
R07DS0308EJ0300 Rev.
3.
00
Jan 10, 2014
3 D
2 G
S 1
1.
Source 2.
Gate 3.
Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation
VDSS
VGSS
ID ID(pulse) Note1
IDR Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Note...
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