GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems ø2.2 3.9±0.3 2.4 1.5 4.5±0.3 Features High-power output, high-efficiency : PO = 4.6 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) ...
Panasonic Semiconductor