Part Number
|
SIGC12T120 |
Manufacturer
|
Infineon Technologies |
Description
|
IGBT |
Published
|
Sep 15, 2007 |
Detailed Description
|
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SIGC12T120
IGBT Chip
FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short...
|
Datasheet
|
SIGC12T120
|
Overview
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DataSheet4U.
com
SIGC12T120
IGBT Chip
FEATURES: • 1200V Trench & Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling
3
This chip is used for: • power module
C
Applications: • drives
G
E
Chip Type SIGC12T120
VCE 1200V
ICn 8A
Die Size 3.
54 x 3.
5 mm2
Package sawn on foil
Ordering Code Q67050A4102-A001
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 3.
54 x 3.
5 2.
028 x 2.
028 1.
10...
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