|
Part Number
|
LN65 |
|
Manufacturer
|
Panasonic Semiconductor |
|
Description
|
GaAs Infrared Light Emitting Diode |
|
Published
|
Mar 22, 2005 |
|
Detailed Description
|
Infrared Light Emitting Diodes
LN65
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
...
|
|
Datasheet
|
LN65
|
Overview
Infrared Light Emitting Diodes
LN65
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 5.
5 mW (typ.
) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emission close to monochromatic light : λP = 950 nm (typ.
)
4.
5±0.
3
2.
8 1.
8 1.
0
4.
8±0.
3 2.
4 2.
4
12.
5 min.
10.
0 min.
2-0.
98±0.
2 2-0.
45±0.
15 0.
45±0.
15
2.
54 R1.
75
Not soldered
ø3.
5±0.
2
4.
2±0.
3 2.
3 1.
9
1.
2
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD...
Similar Datasheet