|
Part Number
|
LN66 |
|
Manufacturer
|
Panasonic Semiconductor |
|
Description
|
GaAs Infrared Light Emitting Diode |
|
Published
|
Mar 22, 2005 |
|
Datasheet
|
LN66
|
Features
High-power output, high-efficiency : PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package
13....
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