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Part Number
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LN66F |
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Manufacturer
|
Panasonic Semiconductor |
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Description
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GaAs Infrared Light Emitting Diode |
|
Published
|
Mar 22, 2005 |
|
Datasheet
|
LN66F
|
Features
High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transparent epoxy resin package
13.5±1.0 11.5±1.0 3.6±0.3 1.0 7.65±0.2
ø5.0±0.2 Not soldered...
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