Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.
25 2-0.
8 max.
2-0.
6±0.
15 2.
54 For optical control systems Features High-power output, high-efficiency :PO = 8 mW (typ.
) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg.
(typ.
) Transparent epoxy resin package Long lead-wire type 26.
3±1.
0 24.
3±1.
0 5.
25±0.
3 1.
5 1.
0 7.
65±0.
2 ø5.
0±0.
2 Good radiant power output linearity with respect to input current Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.
5 3 –25 to +85 – ...

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