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Part Number
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LN69 |
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Manufacturer
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Panasonic Semiconductor |
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Description
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GaAs Infrared Light Emitting Diode |
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Published
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Mar 22, 2005 |
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Detailed Description
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Infrared Light Emitting Diodes
LN69
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.0 max. 2-0.8 max. 2-0.5...
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Datasheet
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LN69
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Overview
Infrared Light Emitting Diodes
LN69
GaAs Infrared Light Emitting Diode
Unit : mm
Not soldered 2.
0 max.
2-0.
8 max.
2-0.
5±0.
1 0.
5±0.
1 2 (1.
5) 1 2.
54 1.
6
For optical control systems
5.
5±0.
2 1.
0 15.
5±1.
0 1.
0 4.
5±0.
3
ø3.
6±0.
2 ø3.
0±0.
2
Features
High-power output, high-efficiency : Ie = 3.
5 mW/sr (min.
) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.
) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR...
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