Infrared Light Emitting Diodes LN75X GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 10 mW (typ.
) High-speed modulation capability : fC = 12 MHz 4.
5±0.
3 Not soldered ø3.
5±0.
2 4.
8±0.
3 2.
4 2.
4 4.
2±0.
3 2.
3 1.
9 2.
8 1.
8 1.
0 12.
8 min.
10.
0 min.
2-0.
98±0.
2 2-0.
45±0.
15 0.
45±0.
15 2.
54 R1.
75 1.
2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 180 100 1 3 –25 to +85 –30 to+100 Unit mW mA A V ˚C ˚C 1 2 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty ...

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