Infrared Light Emitting Diodes LN77L GaAlAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 18 mW (typ.
) Fast response and high-speed modulation capability : fC = 20 MHz (typ.
) Wide directivity : θ = 20 deg.
(typ.
) Transparent epoxy resin package 1.
0 7.
65±0.
2 ø5.
0±0.
2 25.
6±1.
0 5.
05±0.
3 1.
5 (2.
0) 2-0.
8 max.
2-0.
6±0.
15 2.
54 0.
6±0.
15 1 2 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 190 100 1 3 –25 to +85 –30 to +100 Unit mW mA A V ˚C ˚C tw = 10 µs, Duty cycle...

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