Part Number
|
LN78 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
GaAlAs Infrared Light Emitting Diode |
Published
|
Mar 22, 2005 |
Detailed Description
|
Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control cystems
ø2.4
2...
|
Datasheet
|
LN78
|
Overview
Infrared Light Emitting Diodes
LN78
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control cystems
ø2.
4
2.
9±0.
25 4.
5±0.
3
3.
9±0.
3
Features
High-power output, high-efficiency : PO = 10 mW (typ.
) High-speed modulation capability : fC = 12 MHz
12.
8 min.
2.
8
2.
4
2-1.
2±0.
3
Not soldered
1.
2 0.
9
1.
7±0.
2 0.
8
1.
5
2-0.
45±0.
15 1 2.
54 R1.
2 2
0.
45±0.
15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
R0.
6
Symbol PD IF IFP
*
Ratings 180 100 1 3 –25 to+85 –30 to +100
Unit mW mA A V ˚C ˚C
1: Cathode 2: Anode
VR Topr Tstg
f = 100 Hz, Duty cycle ...
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